參數(shù)資料
型號: MCP6S21
廠商: Microchip Technology Inc.
英文描述: Single-Ended, Rail-to-Rail I/O, Low Gain PGA
中文描述: 單端,軌至軌I / O,低增益美國PGA
文件頁數(shù): 3/43頁
文件大?。?/td> 880K
代理商: MCP6S21
2003 Microchip Technology Inc.
DS21117A-page 3
MCP6S21/2/6/8
Power Supply
Supply Voltage
Quiescent Current
Quiescent Current, Shutdown
mode
Power-On Reset
POR Trip Voltage
POR Trip Voltage Drift
Note
1:
R
LAD
(R
F
+ R
G
in Figure 4-1) connects V
REF
, V
OUT
and the inverting input of the internal amplifier. The MCP6S22 has
V
REF
tied internally to V
SS
, so V
SS
is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. We
recommend the MCP6S22’s V
SS
pin be tied directly to ground to avoid noise problems.
2:
I
Q
includes current in R
LAD
(typically 60 μA at V
OUT
= 0.3V). Both I
Q
and I
Q_SHDN
exclude digital switching currents.
3:
The output goes Hi-Z and the registers reset to their defaults; see Section 5.4, “Power-On Reset”.
V
DD
I
Q
2.5
0.5
1.0
0.5
5.5
1.35
1.0
V
mA
μA
I
O
= 0
(Note 2)
I
O
= 0
(Note 2)
I
Q_SHDN
V
POR
V
POR
/
T
1.2
1.7
-3.0
2.2
V
(Note 3)
T
A
= -40°C to+85°C
mV/°C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, R
L
= 10 k
to V
DD
/2, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 =(0.3V)/G, CH1 to CH7=0.3V, R
L
= 10 k
to V
DD
/2, C
L
= 60 pF, SI and SCK are tied low, and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Frequency Response
-3 dB Bandwidth
Gain Peaking
Total Harmonic Distortion plus Noise
f = 1 kHz, G = +1 V/V
BW
GPK
2 to 12
0
MHz
dB
All gains; V
OUT
< 100 mV
P-P
(Note 1)
All gains; V
OUT
< 100 mV
P-P
THD+N
0.0015
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 22 kHz
f = 1 kHz, G = +4 V/V
THD+N
0.0058
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 22 kHz
f = 1 kHz, G = +16 V/V
THD+N
0.023
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 22 kHz
f = 20 kHz, G = +1 V/V
THD+N
0.0035
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +4 V/V
THD+N
0.0093
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +16 V/V
THD+N
0.036
%
V
OUT
= 1.5V ± 1.0V
PK
, V
DD
= 5.0V,
BW = 80 kHz
Step Response
Slew Rate
SR
4.0
11
22
V/μs
V/μs
V/μs
G = 1, 2
G = 4, 5, 8, 10
G = 16, 32
Noise
Input Noise Voltage
E
ni
3.2
26
10
4
μV
P-P
f = 0.1 Hz to 10 kHz
(Note 2)
f = 0.1 Hz to 200 kHz
(Note 2)
nV/
Hz f = 10 kHz
(Note 2)
fA/
Hz f = 10 kHz
Input Noise Voltage Density
Input Noise Current Density
Note
1:
See Table 4-1 for a list of typical numbers.
2:
E
ni
and e
ni
include ladder resistance noise. See Figure 2-33 for e
ni
vs. G data.
e
ni
i
ni
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