參數(shù)資料
型號(hào): MCP1725
廠商: Microchip Technology Inc.
英文描述: 500 mA, Low Voltage, Low Quiescent Current LDO Regulator
中文描述: 500毫安,低電壓,低靜態(tài)電流LDO穩(wěn)壓器
文件頁(yè)數(shù): 21/32頁(yè)
文件大?。?/td> 1000K
代理商: MCP1725
2006 Microchip Technology Inc.
DS22026A-page 21
MCP1725
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application.
Equation 5-4
can be
used to determine the package maximum internal
power dissipation.
EQUATION 5-4:
EQUATION 5-5:
=
EQUATION 5-6:
5.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
EXAMPLE 5-1:
POWER DISSIPATION
EXAMPLE
5.3.1
DEVICE JUNCTION TEMPERATURE
RISE
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R
θ
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7
“High
Effective Thermal Conductivity Test Board for Leaded
Surface-Mount Packages”
. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792,
“A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”
(DS00792), for more information regarding
this subject.
P
D MAX
)
T
------------------------–
T
R
JA
)
(
)
=
P
D(MAX)
= Maximum device power dissipation
T
J(MAX)
= maximum continuous junction
temperature
T
A(MAX)
= maximum ambient temperature
R
θ
JA
= Thermal resistance from junction to
ambient
T
J RISE
)
P
D MAX
)
R
θ
JA
×
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
P
D(MAX)
= Maximum device power dissipation
R
θ
JA
= Thermal resistance from junction to
ambient
T
J
T
J RISE
)
T
A
+
=
T
J
= Junction temperature
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
T
A
= Ambient temperature
Package
Package
Type
=
2x3 DFN
Input Voltage
V
IN
=
3.3V ± 5%
LDO Output Voltage and Current
V
OUT
=
I
OUT
=
Maximum Ambient Temperature
T
A(MAX)
=
Internal Power Dissipation
P
LDO(MAX)
=
2.5V
0.5A
60°C
(V
IN(MAX)
– V
OUT(MIN)
) x
I
OUT(MAX)
((3.3V x 1.05) – (2.5V x 0.975))
x 0.5A
0.51 Watts
P
LDO
=
P
LDO
=
T
J(RISE)
T
JRISE
T
JRISE
=
=
=
P
TOTAL
x R
θ
JA
0.51 W x 76.0
°
C/W
38.8
°
C
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MCP1725-0802E/MC 功能描述:低壓差穩(wěn)壓器 - LDO 500mA CMOS LDO Vout=0.8V RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
MCP1725-0802E/SN 功能描述:低壓差穩(wěn)壓器 - LDO 500mA CMOS LDO Vout=0.8V RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
MCP1725-1202E/MC 功能描述:低壓差穩(wěn)壓器 - LDO 500mA CMOS LDO Vout=1.2V RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
MCP1725-1202E/SN 功能描述:低壓差穩(wěn)壓器 - LDO 500mA CMOS LDO Vout=1.2V RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
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