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參數(shù)資料
| 型號： | MCP1701 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 2uA Low Dropoout Positive Voltage Refulator |
| 中文描述： | 五成低Dropoout正電壓Refulator |
| 文件頁數(shù)： | 11/20頁 |
| 文件大?。?/td> | 385K |
| 代理商： | MCP1701 |
2004 Microchip Technology Inc.
DS21874A-page 11
MCP1701
5.0
THERMAL CONSIDERATIONS
5.1
Power Dissipation
The amount of power dissipated internal to the LDO
linear regulator is the sum of the power dissipation
within the linear pass device (P-channel MOSFET) and
the quiescent current required to bias the internal refer-
ence and error amplifier. The internal linear pass
device power dissipation is calculated as shown in
Equation 5-1.
EQUATION 5-1:
The internal power dissipation, which is due to the bias
current for the LDO internal reference and error ampli-
fier, is calculated as shown in Equation 5-2.
EQUATION 5-2:
The total internal power dissipation is the sum of P
D
(Pass Device) and P
D
(Bias).
EQUATION 5-3:
For the MCP1701, the internal quiescent bias current is
so low (2 μA, typical) that the P
D
(Bias) term of the
power dissipation equation can be ignored. The
maximum power dissipation can be estimated by using
the maximum input voltage and the minimum output
voltage to obtain a maximum voltage differential
between input and output. The next step would be to
multiply the maximum voltage differential by the
maximum output current.
EQUATION 5-4:
To determine the junction temperature of the device, the
thermal resistance from junction-to-ambient must be
known. The 3-pin SOT-23 thermal resistance from
junction-to-air (R
θ
JA
) is estimated to be approximately
335°C/W. The SOT-89 R
θ
JA
is estimated to be
approximately 52°C/W when mounted on 1 square inch
of copper. For the TO-92, R
θ
JA
is estimated to be
131.9°C/W. The R
θ
JA
will vary with physical layout,
airflow and other application-specific conditions.
The device junction temperature is determined by
calculating the junction temperature rise above
ambient, then adding the rise to the ambient
temperature.
EQUATION 5-5:
JUNCTION
TEMPERATURE - SOT-23
EXAMPLE:
EQUATION 5-6:
JUNCTION
TEMPERATURE - SOT-89
EXAMPLE:
EQUATION 5-7:
JUNCTION
TEMPERATURE - TO-92
EXAMPLE:
P
D
(Pass Device) = (V
IN
– V
OUT
) x I
OUT
P
D
(Bias) = V
IN
x I
GND
P
TOTAL
= P
D
(Pass Device) + P
D
(Bias)
P
D
= (V
INMAX
– V
OUTMIN
) x I
OUTMAX
Given:
V
IN
= 3.3V to 4.1V
V
OUT
= 3.0V ± 2%
I
OUT
= 1 mA to 100 mA
T
AMAX
= 55°C
P
MAX
= (4.1V – (3.0V x 0.98)) x 100 mA
P
MAX
= 116.0 milliwatts
T
J
T
J
T
J
P
DMAX
116.0 milliwatts 335°C/W
93.9°C
R
θ
JA
T
A
+
×
=
=
=
55°C
+
T
J
T
J
116.0 milliwatts
61°C
52°C/W
55°C
+
×
=
=
T
J
T
J
116.0 milliwatts 131.9°C/W
70.3°C
55°C
+
=
=
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