參數(shù)資料
型號: MCM62110FN15
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 32K x 9 Bit Synchronous Dual I/O or Separate I/O Fast Static RAM with Parity Checker
中文描述: 32K X 9 APPLICATION SPECIFIC SRAM, 7 ns, PQCC52
封裝: PLASTIC, LCC-52
文件頁數(shù): 4/12頁
文件大?。?/td> 206K
代理商: MCM62110FN15
MCM62110
4
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, VCCQ = 5.0 V or 3.3 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = VSSQ = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.5
V
Output Buffer Supply Voltage (5.0 V TTL Compatible)
(3.3 V 50
Compatible)
VCCQ
4.5
3.0
5.5
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
– 0.5*
0.8
V
*VIL (min) = – 3.0 V ac (pulse width
20 ns)
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
±
1.0
μ
A
Output Leakage Current (POE, SOE = VIH)
Ilkg(O)
±
1.0
μ
A
AC Supply Current (All Inputs = VIL or VIH,VIL = 0.0 V and VIH
3.0 V,
Iout = 0 mA, Cycle Time
tKHKH min)
MCM62110–15: tKHKH = 15 ns
MCM62110–17: tKHKH = 17 ns
MCM62110–20: tKHKH = 20 ns
ICCA
190
190
190
mA
TTL Standby Current (VCC = Max, E1 = VIH or E2 = VIL)
ISB1
40
mA
CMOS Standby Current (VCC = Max, f = 0 MHz, E1 = VIH or E2 = VIL,
Vin
VSS + 0.2 V or
VCC – 0.2 V)
ISB2
30
mA
Output Low Voltage (IOL = + 8.0 mA, DPE: IOL = + 23.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance (All Pins Except I/Os)
Cin
2
3
pF
Input/Output Capacitance (PDQ0 – PDQ7, SDQ0 – SDQ7, PDQP, SDQP)
Cout
6
7
pF
Data Parity Error Output Capacitance (DPE)
Cout(DPE)
6
7
pF
AC SPEC LOADS
Figure 1A
Figure 1B
5 pF
+ 5 V
DQ
Figure 1C
50 pF
+ 5 V
DPE
255
480
200
DQ
Z0 = 50
RL = 50
VL = 1.5 V
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