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  • 參數(shù)資料
    型號: MCM6205DJ15R2
    廠商: MOTOROLA INC
    元件分類: SRAM
    英文描述: 32K x 9 Bit Fast Static RAM
    中文描述: 32K X 9 STANDARD SRAM, 15 ns, PDSO32
    封裝: 0.300 INCH, PLASTIC, SOJ-32
    文件頁數(shù): 2/8頁
    文件大?。?/td> 143K
    代理商: MCM6205DJ15R2
    MCM6205D
    2
    MOTOROLA FAST SRAM
    TRUTH TABLE
    (X = Don’t Care)
    E1
    E2
    G
    W
    Mode
    VCC Current
    ISB1, ISB2
    ISB1, ISB2
    ICCA
    ICCA
    ICCA
    Output
    Cycle
    H
    X
    L
    L
    L
    X
    L
    H
    H
    H
    X
    X
    H
    L
    X
    X
    X
    H
    H
    L
    Not Selected
    Not Selected
    Output Disabled
    Read
    Write
    High–Z
    High–Z
    High–Z
    Dout
    High–Z
    Read Cycle
    Write Cycle
    ABSOLUTE MAXIMUM RATINGS
    Rating
    Symbol
    Value
    Unit
    Power Supply Voltage
    VCC
    Vin, Vout
    – 0.5 to + 7.0
    V
    Voltage Relative to VSS For Any Pin
    Except VCC
    – 0.5 to VCC + 0.5
    V
    Output Current
    Iout
    PD
    Tbias
    TA
    Tstg
    ±
    20
    mA
    Power Dissipation
    1.0
    W
    Temperature Under Bias
    – 10 to + 85
    °
    C
    Operating Temperature
    0 to + 70
    °
    C
    Storage Temperature — Plastic
    – 55 to + 125
    °
    C
    NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
    exceeded. Functional operation should be restricted to RECOMMENDED OPER-
    ATING CONDITIONS. Exposure to higher than recommended voltages for
    extended periods of time could affect device reliability.
    DC OPERATING CONDITIONS AND CHARACTERISTICS
    (VCC = 5.0 V
    ±
    10%, TA = 0 to 70
    °
    C, Unless Otherwise Noted)
    RECOMMENDED OPERATING CONDITIONS
    Parameter
    Symbol
    Min
    Typ
    Max
    Unit
    Supply Voltage (Operating Voltage Range)
    VCC
    VIH
    4.5
    5.0
    5.5
    V
    Input High Voltage
    2.2
    VCC + 0.3
    **
    V
    Input Low Voltage
    VIL
    – 0.5
    *
    0.8
    V
    *VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
    20 ns)
    **VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width
    20 ns)
    DC CHARACTERISTICS
    Parameter
    Symbol
    Min
    Max
    Unit
    Input Leakage Current (All Inputs, Vin = 0 to VCC)
    Output Leakage Current (E1 = VIH or G = VIH or E2 = VIL, Vout = 0 to VCC)
    Output High Voltage (IOH = – 4.0 mA)
    Output Low Voltage (IOL = 8.0 mA)
    Ilkg(I)
    Ilkg(O)
    VOH
    VOL
    ±
    1
    μ
    A
    ±
    1
    μ
    A
    2.4
    V
    0.4
    V
    POWER SUPPLY CURRENTS
    Parameter
    Symbol
    – 15
    – 20
    – 25
    Unit
    AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
    AC Standby Current (E1 = VIH, or E2 = VIL, VCC = Max, f = fmax)
    CMOS Standby Current (VCC = Max, f = 0 MHz, E1
    VCC – 0.2 V or
    E2
    VSS + 0.2 V, Vin
    VSS + 0.2 V, or
    VCC – 0.2 V)
    ICCA
    ISB1
    ISB2
    140
    135
    130
    mA
    40
    40
    35
    mA
    20
    20
    20
    mA
    This device contains circuitry to protect the
    inputs against damage due to high static volt-
    ages or electric fields; however, it is advised
    that normal precautions be taken to avoid
    application of any voltage higher than maxi-
    mum rated voltages to this high–impedance
    circuit.
    This CMOS memory circuit has been de-
    signed to meet the dc and ac specifications
    shown in the tables, after thermal equilibrium
    has been established. The circuit is in a test
    socket or mounted on a printed circuit board
    and transverse air flow of at least 500 linear
    feet per minute is maintained.
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