
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
42
Freescale Semiconductor
Electrical Characteristics
AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5 = 000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 40. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode
ovdd=1.65–1.95V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times (High Drive)1
tpr
15pF
35pF
1.42/1.43
3.03/2.92
1.20/1.27
2.39/2.38
1.43/1.49
2.35/2.46
ns
Output Pad Transition Times (Medium Drive)1
tpr
15pF
35pF
2.04/2.04
4.51/4.49
1.68/1.74
3.47/3.50
1.82/1.91
3.16/3.30
ns
Output Pad Transition Times (Low Drive)1
tpr
15pF
35pF
4.08/3.93
9.06/8.93
3.16/3.19
6.92/6.93
2.90/3.01
5.74/5.96
ns
Output Pad Propagation Delay (High Drive)1
tpo
15pF
35pF
2.00/2.17
3.15/3.42
2.33/2.50
3.24/3.52
3.70/3.70
4.63/4.75
ns
Output Pad Propagation Delay (Medium Drive)1
tpo
15pF
35pF
2.47/2.68
4.2/4.53
2.72/2.92
4.01/4.37
4.10/4.16
5.33/5.55
ns
Output Pad Propagation Delay (Low Drive)1
tpo
15pF
35pF
3.87/4.18
7.32/7.86
3.78/4.10
6.35/6.90
5.13/5.30
7.25/7.73
ns
Output Pad Slew Rate (High Drive)1
tps
15pF
35pF
0.82/0.82
0.39/0.40
0.90/0.85
0.45/0.49
0.69/0.66
0.42/0.40
V/ns
Output Pad Slew Rate (Medium Drive)1
tps
15pF
35pF
0.57/0.57
0.26/0.26
0.70/0.62
0.31/0.31
0.54/0.52
0.31/0.30
V/ns
Output Pad Slew Rate (Low Drive)1
tps
15pF
35pF
0.29/0.30
0.13/0.13
0.34/0.34
0.16/0.16
0.34/0.33
0.17/0.17
V/ns
Output Pad di/dt (High Drive)1
di/dt
47
14
9
mA/ns
Output Pad di/dt (Medium drive)1
di/dt
—
27
9
6
mA/ns
Output Pad di/dt (Low drive)1
di/dt
—
12
5
3
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.45/0.93
0.6/0.58
0.9/0.88
ns
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.55/0.55
0.71/0.7
1.03/0.98
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.38/0.38
0.58/0.61
1.014/1.07
—
Maximum Input Transition Times3
trm
—
5
ns