參數(shù)資料
型號: MCF51AG128VLK
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PQFP80
封裝: 14 X 14 MM, 1.40 MM HEIGHT, 0.65 MM PITCH, PLASTIC, LQFP-80
文件頁數(shù): 29/50頁
文件大小: 1630K
代理商: MCF51AG128VLK
Preliminary Electrical Characteristics
MCF51AG128 ColdFire Microcontroller, Rev. 5
Freescale Semiconductor
35
2.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.14.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East). For more detailed information concerning the
evaluation results, conditions and setup, please refer to the EMC Evaluation Report for this device.
Table 19. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typical1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25 °C unless otherwise stated.
Max
Unit
1
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2
Supply voltage for read operation
VRead
2.7
5.5
V
3
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
5
Byte program time (random location)2
tprog
9tFcyc
6
Byte program time (burst mode)2
tBurst
4tFcyc
7
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8
Mass erase time2
tMass
20,000
tFcyc
9
C
Program/erase endurance4
TL to TH = –40 °C to 105 °C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
10,000
100,000
cycles
10
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
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