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MC74VHC4316
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4
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND Except Where Noted
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25°C
v 85°C
v 125°C
VIH
Minimum HighLevel Voltage, Control
or Enable Inputs
Ron = Per Spec
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum LowLevel Voltage, Control
or Enable Inputs
Ron = Per Spec
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
Iin
Maximum Input Leakage Current,
Control or Enable Inputs
Vin = VCC or GND
VEE = – 6.0 V
6.0
± 0.1
± 1.0
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
VIO = 0 V
VEE = GND
VEE = – 6.0
6.0
2
4
20
40
160
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book
(DL129/D).
DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to VEE)
Symbol
Parameter
Test Conditions
VCC
V
VEE
V
Guaranteed Limit
Unit
– 55 to
25°C
v 85°C
v 125°C
Ron
Maximum “ON” Resistance
Vin = VIH
VIS = VCC to VEE
IS v 2.0 mA
2.0*
4 5
4.5
6.0
0.0
4.5
6.0
160
90
200
110
240
130
W
Vin = VIH
VIS = VCC or VEE (Endpoints)
IS v 2.0 mA
2.0
4.5
6.0
0.0
4.5
6.0
90
70
115
90
140
105
DRon
Maximum Difference in “ON”
Resistance Between Any Two
Channels in the Same Package
Vin = VIH
VIS = 1/2 (VCC VEE)
IS v 2.0 mA
2.0
4.5
6.0
0.0
– 4.5
– 6.0
20
15
25
20
30
25
W
Ioff
Maximum OffChannel
Leakage Current, Any One
Channel
Vin = VIL
VIO = VCC or VEE
Switch Off (Figure 3)
6.0
– 6.0
0.1
0.5
1.0
mA
Ion
Maximum OnChannel
Leakage Current, Any One
Channel
Vin = VIH
VIS = VCC or VEE
(Figure 4)
6.0
– 6.0
0.1
0.5
1.0
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book
(DL129/D).
*At supply voltage (VCC VEE) approaching 2.0 V the analog switchon resistance becomes extremely nonlinear. Therefore, for lowvoltage
operation, it is recommended that these devices only be used to control digital signals.