參數(shù)資料
型號(hào): MC74HCT244SD
廠商: Motorola, Inc.
英文描述: Octal 3-State Noninverting Buffer/Line Driver/Line Receiver with LSTTL-Compatible Inputs
中文描述: 八路三態(tài)同相緩沖器/線路驅(qū)動(dòng)器/線接收器的輸入通道兼容輸入
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 183K
代理商: MC74HCT244SD
MC54/74HCT244A
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
Functional operation should be restricted to the Recommended Operating Conditions.
Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
Ceramic DIP: – 10 mW/ C from 100 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
SSOP or TSSOP Package: – 6.1 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Tstg
Storage Temperature
TL
Lead Temperature, 1 mm from Case for 10 Seconds
V
SSOP or TSSOP Package
300
450
mW
– 65 to + 150
C
(Ceramic DIP)
C
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
b l
Symbol
Parameter
Test Conditions
di i
V
Voltage
|Iout|
20
μ
A
5.5
0.8
25 C
0.8
0.8
VIH
Minimum High–Level Input
Vout = 0.1 V or VCC – 0.1 V
4.5
2
2
2
V
Voltage
|Iout|
6 mA
Maximum Low–Level Input
4.5
Vout = 0.1 V or VCC – 0.1 V
0.26
0.33
V
Iin
Maximum Input Leakage Current
|Iout|
20
μ
A
5.5
0.1
5.4
0.1
5.4
5.4
20
μ
A
Vin = VIH or VIL
5.5
Vin = VCC or GND
Maximum Low–Level Output
5.5
|Iout|
±
0.1
0.1
V
|Iout|
6 mA
4.5
0.4
±
1.0
±
1.0
μ
A
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
(Vin or Vout)
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
VCC.
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