參數(shù)資料
型號： MC74HC390DR2
廠商： ON SEMICONDUCTOR
元件分類： 計數(shù)器
英文描述： HC/UH SERIES, ASYN NEGATIVE EDGE TRIGGERED 3-BIT UP DECADE COUNTER, PDSO16
封裝： PLASTIC, SOIC-16
文件頁數(shù)： 2/9頁
文件大小： 223K
代理商： MC74HC390DR2
MC74HC390
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,Plastic or Ceramic DIP
SOIC Package
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic or SOIC DIP)
(Ceramic DIP)
260
300
_C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola HighSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum LowLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL
|Iout| v 4.0 mA
|Iout| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
VOL
Maximum LowLevel Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
2.0
4.5
6.0
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout| v 4.0 mA
|Iout| v 5.2 mA
4.5
6.0
0.26
0.33
0.40
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
6.0
8
80
160
μA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola HighSpeed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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參數(shù)描述
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