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參數(shù)資料
| 型號： | MC54HC595 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs |
| 中文描述： | 8位Serial-Input/Serial或并行輸出移位與鎖存3注冊態(tài)輸出 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 297K |
| 代理商： | MC54HC595 |
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
500
450
Tstg
TL
Storage Temperature
SOIC Package
TSSOP Package
– 65 to + 150
C
Lead Temperature, 1 mm from Case for 10 Seconds
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
Ceramic DIP: – 10 mW/ C from 100 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
TSSOP Package: – 6.1 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
(Ceramic DIP)
300
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
Min
2.0
0
Max
6.0
VCC
Unit
V
V
0
400
VCC = 6.0 V
Symbol
Parameter
Test Conditions
V
– 55 to
25 C
85 C
VCC
125 C
6.0
4.2
4.2
4.2
Unit
Maximum Low–Level Input
2.0
0.5
0.5
0.5
Voltage, QA – QH
|Iout|
20
μ
A
4.5
4.4
4.4
4.4
V
Voltage, QA – QH
|Iout|
20
μ
A
4.5
0.1
0.1
0.1
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout)
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
VCC.
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