參數(shù)資料
型號: MC44603A
廠商: ON SEMICONDUCTOR
元件分類: DC/DC變換器
英文描述: RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 15V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance
中文描述: 混合頻率模式二七二三六七六七的PWM控制器
文件頁數(shù): 2/24頁
文件大?。?/td> 405K
代理商: MC44603A
MC44603A
2
MOTOROLA ANALOG IC DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Power Supply and Zener Current
(ICC + IZ)
VC
VCC
30
mA
Supply Voltage with Respect to Ground (Pin 4)
18
V
Output Current (Note 1)
Source
Sink
mA
IO(Source)
IO(Sink)
W
–750
750
Output Energy (Capacitive Load per Cycle)
5.0
μ
J
RF Stby, CT, Soft–Start, Rref, RP Stby Inputs
Foldback Input, Current Sense Input,
E/A Output, Voltage Feedback Input,
Overvoltage Protection, Synchronization Input
Vin
Vin
–0.3 to 5.5
V
–0.3 to
VCC + 0.3
V
Synchronization Input
High State Voltage
Low State Reverse Current
VIH
VIL
VCC + 0.3
–20
V
mA
Demagnetization Detection Input Current
Source
Sink
mA
Idemag–ib (Source)
Idemag–ib (Sink)
IE/A (Sink)
–4.0
10
Error Amplifier Output Sink Current
20
mA
Power Dissipation and Thermal Characteristics
P Suffix, Dual–In–Line, Case 648
Maximum Power Dissipation at TA = 85
°
C
Thermal Resistance, Junction–to–Air
DW Suffix, Surface Mount, Case 751G
Maximum Power Dissipation at TA = 85
°
C
Thermal Resistance, Junction–to–Air
PD
R
θ
JA
0.6
100
W
°
C/W
PD
R
θ
JA
TJ
TA
0.45
145
W
°
C/W
Operating Junction Temperature
150
°
C
Operating Ambient Temperature
–25 to +85
°
C
NOTES:
1.Maximum package power dissipation limits must be observed.
2. ESD data available upon request.
ELECTRICAL CHARACTERISTICS
(VCC and VC = 12 V, [Note 3], Rref = 10 k
, CT = 820 pF, for typical values TA = 25
°
C,
for min/max values TA = –25
°
to +85
°
C [Note 4], unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OUTPUT SECTION
Output Voltage (Note 5)
Low State (ISink = 100 mA)
Low State
(ISink = 500 mA)
High State (ISource = 200 mA)
High State
(ISource = 500 mA)
V
VOL
1.0
1.4
1.5
2.0
1.2
2.0
2.0
2.7
VOH
Output Voltage During Initialization Phase
VCC = 0 to 1.0 V, ISink = 10
μ
A
1 0 to 5 0 V ISi k
VCC = 1.0 to 5.0 V, ISink = 100
VCC= 5 0 to 13 V ISink= 1 0 mA
VCC = 5.0 to 13 V, ISink = 1.0 mA
VOL
V
μ
A
0 1
0.1
0 1
0.1
1.0
1 0
1.0
1 0
1.0
Output Voltage Rising Edge Slew–Rate (CL = 1.0 nF, TJ = 25
°
C)
Output Voltage Falling Edge Slew–Rate (CL = 1.0 nF, TJ = 25
°
C)
ERROR AMPLIFIER SECTION
dVo/dT
300
V/
μ
s
dVo/dT
–300
V/
μ
s
Voltage Feedback Input (VE/A out = 2.5 V)
Input Bias Current (VFB = 2.5 V)
Open Loop Voltage Gain (VE/A out = 2.0 to 4.0 V)
VFB
IFB–ib
AVOL
2.42
2.5
2.58
V
–2.0
–0.6
μ
A
65
70
dB
NOTES:
3.Adjust VCC above the startup threshold before setting to 12 V.
4.Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
5.VC must be greater than 5.0 V.
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