DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC " />
參數(shù)資料
型號： MC33990DR2
廠商： Freescale Semiconductor
文件頁數(shù)： 14/16頁
文件大小： 0K
描述： IC TRANSCEIVER J-1850 BUS 8-SOIC
標(biāo)準(zhǔn)包裝： 1
類型： 收發(fā)器
驅(qū)動器/接收器數(shù)： 1/1
電源電壓： 9 V ~ 16 V
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 剪切帶 (CT)
其它名稱： MC33990DR2CT
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33990
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of 7.0 V
≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with V
BAT = 13 V, TA = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
BUS Voltage Rise Time (10) (9.0 V
≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 6)
BUS Load = 3,300 pF and 1.38 k
Ω to GND
BUS Load = 16,500 pF and 300
Ω to GND
trise(BUS)
9.0
11.15
11.86
15
s
BUS Voltage Fall Time (10) (9.0 V
≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 6)
BUS Load = 3,300 pF and 1.38 k
Ω to GND
BUS Load = 16,500 pF and 300
Ω to GND
tfall(BUS)
9.0
10.50
11.17
15
s
Pulse Width Distortion Time
(9.0 V
≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 7)
BUS Load = 3,300 pF and 1.38 k
Ω to GND
tpwd(BUS)
35
62
93
s
Propagation Delay
TX Threshold to RX Threshold
tpd(BUS)
–
17.7
25
s
TX
TX to BUS Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (Figure 8)
4X Mode
Normal Mode
tTxDelay
–
13
2.6
17.3
4.0
24
s
SLEEP
to Tx Setup Time (Figure 8)
tSLEEPTxSU
80
40
–
s
RX
RX Output Delay Time (TX = 2.5 V to VBUS = 3.875 V) (see Figure 9)
Low-to-Output High
High-to-Output Low
tRxDelay/L–H
tRxDelay/H–L
–
0.11
0.38
2.0
s
RX Output Transition Time (CRx = 50 pF to GND, 10% and 90% Points)
(see
Low-to-Output High
High-to-Output Low
tRxTrans/L–H
tRxTrans/H–L
–
0.34
0.08
1.0
s
Rx Output Transition Time (11) (CRx = 50 pF to GND, SLEEP = 0 V, 10% and
90% Points) (see Figure 10)
Low-to-Output High
High-to-Output Low
tRxTrans/L–H
tRxTrans/H–L
–
0.32
0.08
5.0
s
Notes
10.
Typical is the parameter's approximate average value with VBAT = 13 V, TA = 25°C.
11.
RX Output Transition Time from a sleep state.
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