STATIC ELECTRICAL CHARACTERISTICS STATIC EL" />
參數(shù)資料
型號(hào): MC33990D
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 0K
描述: IC TRANSCEIVER J-1850 BUS 8-SOIC
標(biāo)準(zhǔn)包裝: 98
類(lèi)型: 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù): 1/1
電源電壓: 9 V ~ 16 V
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33990
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V
≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with V
BAT = 13 V, TA = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380
Ω to GND, 3.6 nF to GND
BUS Load = 257
Ω to GND, 20.2 nF to GND
IBAT(OP1)
IBAT(OP2)
3.0
22.4
11.5
32
mA
Battery Bus Low Input Current
After SLEEP
Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
IBAT(BUS L1)
IBAT(BUS L2)
1.1
6.4
3.0
8.5
mA
Sleep State Battery Current
VSLEEP = 0 V
IBAT(SLEEP)
38.2
65
A
BUS
BUS Input Receiver Threshold (7)
Threshold High (Bus Increasing until Rx
≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx
≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
VBUS(IH)
VBUS(IL)
BUSTH(SLEEP)
VBUS(HYST)
4.25
2.4
0.1
3.9
3.7
3.0
0.2
3.5
3.4
0.6
V
BUS-Out Voltage (Tx = 5.0 V, 257
Ω ≤ RBUS(L) to GND ≤ 1380 Ω)
8.2 V
≤ VBAT ≤ 16 V
4.25 V
≤ VBAT ≤ 8.2 V
Tx = 0 V
VBUS(OUT1)
VBUS(OUT2)
VBUS(OUT3)
6.25
VBAT - 1.6
6.9
0.27
8.0
VBAT
0.7
V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V
≤ VBUS ≤ 4.8 V
IBUS(SHORT)
60
129
170
mA
BUS Leakage Current
-2.0 V
≤ VBUS ≤ 0 V (≥ 2.0 ms after Tx Falls to 0 V)
0 V
≤ VBUS ≤ VBAT
0 V
≤ VBUS ≤ 8.0 V
IBUS(LEAK1)
IBUS(LEAK2)
IBUS(LEAK3)
-0.5
-0.055
0.5
0.25
0.5
1.0
0.5
mA
BUS Thermal Shutdown (8) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS ≤ 2.5 V
TBUS(LIM)
150
170
190
°C
BUS Thermal Shutdown Hysteresis (9)
TBUS(LIM) - TBUS(REEN)
TBUS(LIMHYS)
10
12
15
°C
LOAD Input Current with Loss of Ground
VLOAD = -18 V (see Figure 4)
ILOAD(LOG)
-1.0
0.1
mA
BUS Input Current with Loss of Ground
VBUS = -18 V (see Figure 4)
IBUS(LOG)
-1.0
0.1
mA
Notes
7.
Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
8.
Device characterized but not production tested for thermal shutdown.
9.
Device characterized but not production tested for thermal shutdown hysteresis.
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