ELECTRICAL CHARACTERISTICS (continued) (All parameters are specified " />
參數(shù)資料
型號(hào)： MC33215BE
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 15/20頁(yè)
文件大?。?/td> 0K
描述： IC SPEAKERPHONE CIRCUIT 42-SDIP
標(biāo)準(zhǔn)包裝： 13
功能： 語(yǔ)音切換式揚(yáng)聲電話
電路數(shù)： 1
工作溫度： -20°C ~ 70°C
安裝類型： 通孔
封裝/外殼： 42-SDIP（0.600"，15.24mm）
供應(yīng)商設(shè)備封裝： 42-PSDIP
包裝： 管件
MC33215
4
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS (continued) (All parameters are specified at T = 25
°C, Iline = 18 mA, VLS = 2.9 V, f = 1000 Hz,
PRS = high, MUT = high, SPS = low, LSM = high, test figure in Figure 17 with S1 in position 1, unless otherwise stated.)
Characteristic
Unit
Max
Typ
Min
LOGIC INPUTS
Logic Low Level Pins PRS, MUT, SPS, LSM
–
0.4
V
Logic High Level Pins PRS, MUT, SPS, LSM
2.0
–
5.0
V
Internal Pull Up Pins PRS, MUT, LSM
–
100
–
k
Internal Pull Down Pin SPS
–
100
–
k
Tx CHANNEL, HANDSET MICROPHONE AMPLIFIER
Voltage Gain from VHM to Vline
46
47
48
dB
VHM = 1.5 mVrms
Gain Reduction in Mute Condition
60
–
–
dB
MUT = Low or PRS = Low or SPS = High
Input Impedance at HM1 and HM2
14
18
22
k
Common Mode Rejection Ratio
–
50
–
dB
Total Harmonic Distortion at VLN
–
–
2.0
%
VHM = 4.5 mVrms
Psophometrically Weighted Noise Level at Vline
–
–72
–
dBmp
HM1 and HM2 Shorted with 200
Tx CHANNEL, BASE MICROPHONE AMPLIFIER (SPS = HIGH, Tx MODE FORCED)
Voltage Gain from VBM to Vline
53
55.5
58
dB
VBM = 0.5 mVrms
Input Impedance at BM1 and BM2
14
18
22
k
Common Mode Rejection Ratio
–
50
–
dB
Total Harmonic Distortion at VLN
–
–
2.0
%
VBM = 1.5 mV
Psophometrically Weighted Noise Level at Vline
–
–62
–
dBmp
BM1 and BM2 Shorted with 200
Gain Reduction in Mute Condition
60
–
–
dB
MUT = Low or PRS = Low or SPS = Low
Tx CHANNEL, DTMF AMPLIFIER (MUT = LOW OR PRS = LOW)
Voltage Gain from VMF to Vline
34
35
36
dB
VMF = 7.5 mVrms
Input Impedance at MFI
14
18
22
k
Gain Reduction in Mute Condition
60
–
–
dB
MUT = High or PRS = Low
Rx CHANNEL, EARPIECE AMPLIFIER
Voltage Gain from VRXI to VEAR (Note 1)
23
24
25
dB
Vline = 20 mVrms
Gain Reduction in Mute Condition
60
–
–
dB
MUT = Low or SPS = Low
Input Impedance at RXI
24
30
36
k
Psophometrically Weighted Noise Level at VEAR
–
130
–
Vrms
RXI Shorted to Gnd via 10
F
Confidence Level During DTMF Dialing
10
15
20
mVrms
VMF = 7.5 mVrms, MUT = Low
Output Swing Capability into 150
680
–
–
mVpp
THD
≤2%
Output Swing Capability into 450
1800
–
–
mVpp
THD
≤2%, RRXO = 360 k
NOTE:
1. Corresponding to –0.6 dB gain from the line to output RXO in the typical application.
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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