Table 5. 10EP DC CHARACTERISTICS, PECL VCC
參數(shù)資料
型號(hào)： MC100EP35MNR4G
廠商： ON Semiconductor
文件頁(yè)數(shù)： 6/11頁(yè)
文件大?。?/td> 0K
描述： IC FLIP FLOP JK 3.3/5V ECL 8-DFN
標(biāo)準(zhǔn)包裝： 1
系列： 100EP
功能： 復(fù)位
類(lèi)型： JK 型
輸出類(lèi)型： 差分
元件數(shù)： 1
每個(gè)元件的位元數(shù)： 1
頻率 - 時(shí)鐘： 3GHz
延遲時(shí)間 - 傳輸： 410ps
觸發(fā)器類(lèi)型： 正邊沿
電源電壓： 3 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 8-VFDFN 裸露焊盤(pán)
包裝： 剪切帶 (CT)
其它名稱(chēng)： MC100EP35MNR4GOSCT
MC10EP35, MC100EP35
http://onsemi.com
4
Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 4)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1460
1755
1490
1815
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
4. All loading with 50 W to VCC 2.0 V.
Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 5)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 6)
3865
3940
4115
3930
4055
4180
3990
4115
4240
mV
VOL
Output LOW Voltage (Note 6)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
VIH
Input HIGH Voltage (SingleEnded)
3790
4115
3855
4180
3915
4240
mV
VIL
Input LOW Voltage (SingleEnded)
3065
3390
3130
3455
3190
3515
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
6. All loading with 50 W to VCC 2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = 5.5 V to 3.0 V (Note 7)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 8)
1135 1010
885
1070
945
820
1010
885
760
mV
VOL
Output LOW Voltage (Note 8)
1935 1810 1685 1870 1745 1620 1810 1685 1560
mV
VIH
Input HIGH Voltage (SingleEnded)
1210
885
1145
820
1085
760
mV
VIL
Input LOW Voltage (SingleEnded)
1935
1610 1870
1545 1810
1485
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Input and output parameters vary 1:1 with VCC.
8. All loading with 50 W to VCC 2.0 V.
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