參數(shù)資料
型號: MC-4R96CPE6C-745
廠商: NEC Corp.
英文描述: Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT
中文描述: 直接Rambus的內(nèi)存模塊9600 RIMM的技嘉4800字× 16位
文件頁數(shù): 6/16頁
文件大小: 131K
代理商: MC-4R96CPE6C-745
Preliminary Data Sheet M14806EJ2V0DS00
6
MC-4R96CPE6C
(2/2)
Signal
I/O
Type
Description
RSCK
I
V
CMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SV
DD
Serial Presence Detect Address 0.
SA1
I
SV
DD
Serial Presence Detect Address 1.
SA2
I
SV
DD
Serial Presence Detect Address 2.
SCL
I
SV
DD
Serial Presence Detect Clock.
SDA
I/O
SV
DD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SV
DD
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SV
DD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
V
CMOS
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
V
DD
Supply voltage for the RDRAM core and interface logic.
V
REF
Logic threshold reference voltage for RSL signals.
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