參數(shù)資料
型號: MC-4R64FKE8D-653
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
中文描述: 32M X 18 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
封裝: SOCKET TYPE, RIMM-184
文件頁數(shù): 8/14頁
文件大?。?/td> 135K
代理商: MC-4R64FKE8D-653
Data Sheet E0080N20 (Ver 2.0)
8
MC-4R64FKE8D
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on V
DD
with respect to GND
0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
50
+100
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
V
DD
Supply voltage
2.50
0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
0.13
2.5 + 0.25
V
1.8V controllers
1.8
0.1
1.8 + 0.2
V
REF
Reference voltage
1.4
0.2
1.4 + 0.2
V
V
IL
RSL input low voltage
V
REF
0.5
V
REF
0.2
V
V
IH
RSL input high voltage
V
REF
+ 0.2
V
REF
+ 0.5
V
V
IL,CMOS
CMOS input low voltage
0.3
0.5V
CMOS
0.25
V
V
IH,CMOS
CMOS input high voltage
0.5V
CMOS
+0.25
V
CMOS
+ 0.3
V
V
OL,CMOS
CMOS output low voltage, I
OL,CMOS
= 1 mA
0.3
V
V
OH,CMOS
CMOS output high voltage, I
OH,CMOS
=
0.25 mA
V
CMOS
0.3
V
I
REF
V
REF
current, V
REF
,
MAX
20.0
+20.0
μ
A
I
SCK,CMD
CMOS input leakage current, (0
V
CMOS
V
DD
)
20.0
+20.0
μ
A
I
SIN,SOUT
CMOS input leakage current, (0
V
CMOS
V
DD
)
10.0
+10.0
μ
A
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