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參數(shù)資料
| 型號： | MC-458CB64ESB-A10B |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 800萬字，64位同步動態(tài)隨機存儲器模塊以便內(nèi)存 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 126K |
| 代理商： | MC-458CB64ESB-A10B |
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confirm that this is the latest version.
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1996
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB64ESB, 458CB64PSB
8M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M12263EJAV0DS00 (10th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module
(Small Outline DIMM) on which 4 pieces of 128M SDRAM:
μ
PD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS Latency
Clock frequency
(MAX.)
Access time from CLK
(MIN.)
MC-458CB64ESB-A10B
CL = 3
100 MHz
7 ns
CL = 2
67 MHz
8 ns
MC-458CB64PSB-A10B
CL = 3
100 MHz
7 ns
CL = 2
67 MHz
8 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single +3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-458CB64ESB | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CB64PSB | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CB64PSB-A10B | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CB64S | Synchronous Dynamic RAM Module(同步動態(tài)RAM模塊) |
| MC-458CD64S | Synchronous Dynamic RAM Module(同步動態(tài)RAM 模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-458CB64PSB | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CB64PSB-A10B | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC458CB64SAA10B | 制造商:NEC Electronics Corporation 功能描述: |
| MC459 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 wide 3-2-2-3 input expander for and-or-invert gae |
| MC-45D16CA721 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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