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參數(shù)資料
| 型號： | MC-454CB64S |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 64-BIT Dynamic RAM Module(動態(tài)RAM模塊) |
| 中文描述： | 分詞，64位動態(tài)RAM模塊（動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MC-454CB64S |
2
MC-454CB64S
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Dual internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length
(1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
Ordering Information
Part number
Clock frequency
MHz (MAX.)
Package
Mounted devices
MC-454CB64S-A80
125 MHz
144-pin Small Outline DIMM
(Socket Type)
4 pieces of
μ
PD4564163G5 (Rev. E)
(400
mil TSOP (II))
MC-454CB64S-A10
100 MHz
Edge connector : Gold plated
25.4 mm (1 inch) height
[Double side]
MC-454CB64S-A10B
100MHz
MC-454CB64S-A10BL
100 MHz
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