參數(shù)資料
型號(hào)： MC-454CB646
廠商： NEC Corp.
英文描述： 4 M-Word By 64-Bit Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊)
中文描述： 4支M - 64個(gè)字位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊（同步動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 10/16頁(yè)
文件大?。?/td> 136K
代理商： MC-454CB646
10
MC-454CB646
Serial PD
(1/2)
Byte
No.
Function Described
Hex
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Notes
0
Defines the number of bytes written
into serial PD memory
80H
1
0
0
0
0
0
0
0
128 bytes
1
Total number of bytes of serial PD
memory
08H
0
0
0
0
1
0
0
0
256 bytes
2
Fundamental memory type
04H
0
0
0
0
0
1
0
0
SDRAM
3
Number of rows
0CH
0
0
0
0
1
1
0
0
12 rows
4
Number of columns
08H
0
0
0
0
1
0
0
0
8 columns
5
Number of banks
01H
0
0
0
0
0
0
0
1
1 bank
6
Data width
40H
0
1
0
0
0
0
0
0
64 bits
7
Data width (continued)
00H
0
0
0
0
0
0
0
0
0
8
Voltage interface
01H
0
0
0
0
0
0
0
1
LVTTL
9
CL = 3 cycle time
-A80
80H
1
0
0
0
0
0
0
0
8 ns
-A10
A0H
1
0
1
0
0
0
0
0
10 ns
10
CL = 3 access time
-A80
60H
0
1
1
0
0
0
0
0
6 ns
-A10
60H
0
1
1
0
0
0
0
0
6 ns
11
DIMM configuration type
00H
0
0
0
0
0
0
0
0
None
12
Refresh rate / type
80H
1
0
0
0
0
0
0
0
Normal
13
SDRAM width
10H
0
0
0
1
0
0
0
0
x16
14
Error checking SDRAM width
00H
0
0
0
0
0
0
0
0
None
15
Minimum clock delay
01H
0
0
0
0
0
0
0
1
1 clock
16
Burst length supported
8FH
1
0
0
0
1
1
1
1
1, 2, 4, 8, F
17
Number of banks on each SDRAM
04H
0
0
0
0
0
1
0
0
4 banks
18
/CAS latency supported
06H
0
0
0
0
0
1
1
0
2, 3
19
/CS latency supported
01H
0
0
0
0
0
0
0
1
0
20
/WE latency supported
01H
0
0
0
0
0
0
0
1
0
21
SDRAM module attributes
00H
0
0
0
0
0
0
0
0
22
SDRAM device attributes : General
0EH
0
0
0
0
1
1
1
0
23
CL = 2 cycle time
-A80
A0H
1
0
1
0
0
0
0
0
10 ns
-A10
D0H
1
1
0
1
0
0
0
0
13 ns
24
CL = 2 access time
-A80
60H
0
1
1
0
0
0
0
0
6 ns
-A10
70H
0
1
1
1
0
0
0
0
7 ns
25-26
00H
0
0
0
0
0
0
0
0
27
t
RP (MIN.)
-A80
14H
0
0
0
1
0
1
0
0
20 ns
-A10
14H
0
0
0
1
0
1
0
0
20 ns
28
t
RRD (MIN.)
-A80
10H
0
0
0
1
0
0
0
0
10 ns
-A10
14H
0
0
0
1
0
1
0
0
20 ns
29
t
RCD (MIN.)
-A80
14H
0
0
0
1
0
1
0
0
20 ns
-A10
14H
0
0
0
1
0
1
0
0
20 ns
30
t
RAS (MIN.)
-A80
30H
0
0
1
1
0
0
0
0
48 ns
-A10
32H
0
0
1
1
0
0
1
0
50 ns
31
Module bank density
08H
0
0
0
0
1
0
0
0
32 bytes
相關(guān)PDF資料
PDF描述
MC-454CB64S 4M-Word By 64-BIT Dynamic RAM Module(動(dòng)態(tài)RAM模塊)
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MC-4564EC727 64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
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