參數(shù)資料
型號: MC-4516CD645
廠商: NEC Corp.
英文描述: 16M-Word By 64-BIT Dynamic RAM Module(動態(tài)RAM模塊)
中文描述: 1,600詞,64位動態(tài)RAM模塊(動態(tài)內(nèi)存模塊)
文件頁數(shù): 8/16頁
文件大?。?/td> 138K
代理商: MC-4516CD645
8
MC-4516CD645
Synchronous Characteristics
Parameter
Symbol
-A10B
Unit
Note
MIN.
MAX.
Clock cycle time
/CAS latency = 3
t
CK3
10
(100 MHz)
ns
/CAS latency = 2
t
CK2
15
(67 MHz)
ns
Access time from CLK
/CAS latency = 3
t
AC3
7
ns
1
/CAS latency = 2
t
AC2
8
ns
1
CLK high level width
t
CH
3.5
ns
CLK low level width
t
CL
3.5
ns
Data-out hold time
t
OH
3
ns
1
Data-out low-impedance time
t
LZ
0
ns
Data-out high-impedance time
/CAS latency = 3
t
HZ3
3
7
ns
/CAS latency = 2
t
HZ2
3
8
ns
Data-in setup time
t
DS
2.5
ns
Data-in hold time
t
DH
1
ns
Address setup time
t
AS
2.5
ns
Address hold time
t
AH
1
ns
CKE setup time
t
CKS
2.5
ns
CKE hold time
t
CKH
1
ns
CKE setup time (Power down exit)
t
CKSP
2.5
ns
Command (/CS0 - /CS3, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
t
CMS
2.5
ns
Command (/CS0 - /CS3, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
t
CMH
1
ns
Note 1.
Output load
Output
Z = 50
1.4 V
50 pF
50
相關(guān)PDF資料
PDF描述
MC-4516CD646 16M-Word By 64-BIT Dynamic RAM Module(16M×64位動態(tài)RAM模塊)
MC-4516CD64ES-A10B 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64PS-A10B 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
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