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參數(shù)資料
| 型號： | MC-4516CD646 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-Word By 64-BIT Dynamic RAM Module(16M×64位動態(tài)RAM模塊) |
| 中文描述： | 1,600詞，64位動態(tài)RAM模塊（1,600 × 64位動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 150K |
| 代理商： | MC-4516CD646 |
1997
MOS INTEGRATED CIRCUIT
MC-4516CD646
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
The mark
shows major revised points.
Document No. M13047EJ4V0DS00 (4th edition)
Date Published May 1998 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
64M SDRAM :
μ
PD4564841 (Revision E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-4516CD646-A80
CL = 3
125 MHz
6
ns
4,608
mW
28.8
mW
CL = 2
100 MHz
6
ns
4,464 mW
(CMOS level input )
MC-4516CD646-A10
CL = 3
100 MHz
6
ns
4,608
mW
CL = 2
77 MHz
7
ns
4,464 mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length : 1, 2, 4, 8 and full page
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4516CD64ES-A10B | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64PS-A10B | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64ES | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64PS | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64S | 16M-Word By 64-BIT Dynamic RAM Module(動態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4516CD64ES | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64ES-A10B | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD64PS | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-4516CD64PS-A10B | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516DA726 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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