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參數(shù)資料
| 型號： | MC-4516CD641PS |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 1,600字，64位同步動(dòng)態(tài)隨機(jī)存儲器模塊以便內(nèi)存 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 150K |
| 代理商： | MC-4516CD641PS |
Data Sheet M14014EJ5V0DS00
8
MC-4516CD641ES, 4516CD641PS
Synchronous Characteristics
Parameter
Symbol
-A80
-A10
Unit
Note
MIN.
MAX.
MIN.
MAX.
Clock cycle time
/CAS latency = 3
t
CK3
8
(125 MHz)
10
(100 MHz)
ns
/CAS latency = 2
t
CK2
10
(100 MHz)
13
(77 MHz)
ns
Access time from CLK
/CAS latency = 3
t
AC3
6
6
ns
1
/CAS latency = 2
t
AC2
6
7
ns
1
CLK high level width
t
CH
3
3
ns
CLK low level width
t
CL
3
3
ns
Data-out hold time
t
OH
3
3
ns
1
Data-out low-impedance time
t
LZ
0
0
ns
Data-out high-impedance time
/CAS latency = 3
t
HZ3
3
6
3
6
ns
/CAS latency = 2
t
HZ2
3
6
3
7
ns
Data-in setup time
t
DS
2
2
ns
Data-in hold time
t
DH
1
1
ns
Address setup time
t
AS
2
2
ns
Address hold time
t
AH
1
1
ns
CKE setup time
t
CKS
2
2
ns
CKE hold time
t
CKH
1
1
ns
CKE setup time (Power down exit)
t
CKSP
2
2
ns
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
t
CMS
2
2
ns
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
t
CMH
1
1
ns
Note 1.
Output load
Output
Z = 50
50 pF
Remark
These specifications are applied to the monolithic device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4516CD641PS-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641XS | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-4516CD641XS-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-4516CD641XS-A80 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
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