參數(shù)資料
型號: MC-428LFF721
廠商: NEC Corp.
英文描述: 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動態(tài)RAM模塊)
中文描述: 3.3 V工作電壓1,600由72字位動態(tài)RAM模塊(工作電壓為3.3伏的動態(tài)內(nèi)存模塊)
文件頁數(shù): 23/32頁
文件大?。?/td> 277K
代理商: MC-428LFF721
23
MC-428LFF721
Hyper Page Mode (EDO) Read Modify Write Cycle
t
RCS
/CAS
t
CPN
t
CP
t
HCAS
t
HCAS
t
CP
t
HPRWC
t
HCAS
t
RCD
/RAS
t
RASP
t
RP
t
CRP
Address
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
ASC
t
CAH
t
CAH
t
ASC
Row
Col.
Col.
Col.
t
RAL
/WE
t
RWD
t
AWD
t
CWD
t
OLZ
t
DH
t
DS
t
WP
t
RCS
t
CWL
t
ACP
t
CPWD
t
AWD
t
CWD
t
WP
t
CWL
t
ACP
t
CPWD
t
AWD
t
CWD
t
RCS
t
CWL
t
RWL
t
WP
/OE
DQ
out
t
CLZ
t
OED
t
OEZ
t
OEA
t
CAC
t
AA
t
RAC
in
t
OEA
t
OEH
t
CAC
t
AA
t
OLZ
t
DH
t
DS
out
t
OEZ
t
OED
in
t
OLZ
t
DH
t
DS
out
t
OEZ
t
CLZ
t
OED
in
t
OEH
t
AA
t
CAC
t
OEA
t
OEH
Hi-Z
Hi-Z
Hi-Z
Hi-Z
DQ
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
CLZ
Remark
In the hyper page mode (EDO), read, write and read modify write cycles are available for each of the
consecutive /CAS cycles within the same /RAS cycle.
相關(guān)PDF資料
PDF描述
MC-428LFG641 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
MC-428LFH641 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
MC-42S4LFG64S 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作電壓為3.3V的動態(tài)RAM模塊)
MC-42S8LFF64S 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作電壓為3.4V的DRAM模塊)
MC-42S8LFG64S 8 M-Word By 64-Bit Synchronous Dynamic RAM Module(同步動態(tài)RAM 模塊)
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