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參數(shù)資料
| 型號： | MC-4216LFH641 |
| 廠商： | NEC Corp. |
| 英文描述： | 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊) |
| 中文描述： | 3.3 V工作電壓1,600由72字位動態(tài)RAM模塊（工作電壓為3.3伏的內(nèi)存模塊） |
| 文件頁數(shù)： | 8/32頁 |
| 文件大小： | 279K |
| 代理商： | MC-4216LFH641 |
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8
MC-4216LFH641
Common to Read, Write, Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
Read / Write cycle time
t
RC
84
104
ns
/RAS precharge time
t
RP
30
40
ns
/CAS precharge time
t
CPN
7
10
ns
/RAS pulse width
t
RAS
50
10,000
60
10,000
ns
/CAS pulse width
t
CAS
8
10,000
10
10,000
ns
/RAS hold time
t
RSH
13
15
ns
/CAS hold time
t
CSH
38
40
ns
/RAS to /CAS delay time
t
RCD
11
37
14
45
ns
1
/RAS to column address delay time
t
RAD
9
25
12
30
ns
1
/CAS to /RAS precharge time
t
CRP
5
5
ns
2
Row address setup time
t
ASR
0
0
ns
Row address hold time
t
RAH
7
10
ns
Column address setup time
t
ASC
0
0
ns
Column address hold time
t
CAH
7
10
ns
/OE lead time referenced to /RAS
t
OES
0
0
ns
/CAS to data setup time
t
CLZ
0
0
ns
/OE to data setup time
t
OLZ
0
0
ns
/OE to data delay time
t
OED
10
13
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
Refresh time
t
REF
64
64
ms
Notes 1.
For read cycles, access time is defined as follows:
Input conditions
Access time
Access time from /RAS
t
RAD
≤
t
RAD (MAX.)
and t
RCD
≤
t
RCD (MAX.)
t
RAC (MAX.)
t
RAC (MAX.)
t
RAD
> t
RAD (MAX.)
and t
RCD
≤
t
RCD (MAX.)
t
AA (MAX.)
t
RAD
+ t
AA (MAX.)
t
RCD
> t
RCD (MAX.)
t
CAC (MAX.)
t
RCD
+ t
CAC (MAX.)
t
RAD (MAX.)
and t
RCD (MAX.)
are specified as reference points only; they are not restrictive operating parameters.
They are used to determine which access time (t
RAC
, t
AA
or t
CAC
) is to be used for finding out when output
data will be available. Therefore, the input conditions t
RAD
≥
t
RAD (MAX.)
and t
RCD
≥
t
RCD (MAX.)
will not cause any
operation problems.
2.
t
CRP
(MIN.)
requirement is applied to /RAS, /CAS cycles.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MC423L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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