參數(shù)資料
型號(hào)： MC-4216LFH641
廠商： NEC Corp.
英文描述： 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
中文描述： 3.3 V工作電壓1,600由72字位動(dòng)態(tài)RAM模塊（工作電壓為3.3伏的內(nèi)存模塊）
文件頁(yè)數(shù)： 5/32頁(yè)
文件大?。?/td> 279K
代理商： MC-4216LFH641
5
MC-4216LFH641
Electrical Specifications
All voltages are referenced to GND.
After power up (V
CC
≥
V
CC (MIN.)
), wait more than 100
μ
s (/RAS, /CAS inactive) and then, execute eight /CAS before
/RAS or /RAS only refresh cycles as dummy cycles to initialize internal circuit.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on any pin relative to GND
V
T
0.5 to +4.6
V
Supply voltage
V
CC
0.5 to +4.6
V
Output current
I
O
50
mA
Power dissipation
P
D
16
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+ 0.3
V
Low level input voltage
V
IL
0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A12
110
pF
C
I2
/RAS0, /RAS2
80
C
I3
/CAS0 - /CAS7
35
C
I4
/WE0, /WE2
80
C
I5
/OE0, /OE2
80
Data input/output capacitance
C
I/O
DQ0 - DQ63
30
pF
相關(guān)PDF資料
PDF描述
MC-424LFG641 64 bits dynamic RAM modules(64 位動(dòng)態(tài)RAM 模塊)
MC-428LFC72 3.3 V Operation 4M-Word By 64-Bit Dynamic RAM Module(工作電壓為3.3V的動(dòng)態(tài)RAM模塊)
MC-428LFF721 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動(dòng)態(tài)RAM模塊)
MC-428LFG641 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
MC-428LFH641 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
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