- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383553 > MBT3904DW1T1 (樂山無線電股份有限公司) Dual General Purpose Transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | MBT3904DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors |
| 中文描述： | 雙通用晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 105K |
| 代理商： | MBT3904DW1T1 |
MBT3904DW1T1, MBT3904DW2T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
50
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
40
70
100
60
30
300
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.2
0.3
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
4.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
8.0
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0
2.0
10
12
k
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5
0.1
8.0
10
X 10
4
SmallSignal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100
100
400
400
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0
3.0
40
60
mhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 Adc, R
S
= 1.0 k , f = 1.0 kHz)
NF
5.0
4.0
dB
2. Pulse Test: Pulse Width
≤
300 s; Duty Cycle
≤
2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBT3946DW1T1 | Dual General Purpose Transistors |
| MBT3946DW1T1 | Dual General Purpose Transistor |
| MBT3946DW1T1G | Dual General Purpose Transistor |
| MBT3946DW1T2 | Dual General Purpose Transistor |
| MBT3946DW1T2G | Dual General Purpose Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3904DW1T1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistors |
| MBT3904DW1T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW1T3 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW1T3G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW2T1 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。