參數(shù)資料
型號(hào): MBT35200
廠商: ON SEMICONDUCTOR
元件分類: 繼電器,輸入/輸出模塊
英文描述: 30 AMP MINIATURE POWER RELAY
中文描述: 高電流表面貼裝進(jìn)步黨硅晶體管的負(fù)荷開關(guān)在便攜式應(yīng)用管理
文件頁數(shù): 3/8頁
文件大?。?/td> 81K
代理商: MBT35200
MBT35200MT1
http://onsemi.com
3
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
0.001
I
C
, COLLECTOR CURRENT (AMPS)
0.1
0.01
I
C
, COLLECTOR CURRENT (AMPS)
0.1
1.0
0.001
0.05
0
0.001
0.01
0.1
1.0
0.01
0.10
0.15
I
C
/I
B
= 100
0.20
0.25
100
°
C
25
°
C
-55
°
C
50
10
VC
V
VC
V
I
C
/I
B
= 50
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Base Emitter Turn–On Voltage
versus Collector Current
Figure 6. Input Capacitance
0.1
1.0
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.6
0.4
1.0
0.2
0
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.001
1.0
0.4
0
0.1
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.1
0.6
0.5
0.4
0.3
V
EB
, EMITTER BASE VOLTAGE (VOLTS)
0
750
550
500
450
350
300
1.5
0.01
h
VB
0.01
0.1
1.0
,
VB
1.0
0.9
0.5
5.0
1.0
400
Ci
1.2
0.6
0.8
1.4
100
°
C
0.6
0.8
V
700
650
600
25
°
C
-55
°
C
0.2
100
°
C
25
°
C
-55
°
C
0.8
0.7
1.0
100
°
C
25
°
C
-55
°
C
3.0
2.0
2.5
3.5
4.0
4.5
F
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MBT35200MT1 功能描述:兩極晶體管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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