參數(shù)資料
型號(hào): MBRB3035CT-1
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 63K
代理商: MBRB3035CT-1
MBR3045CT, MBRF3045CT & MBRB3045CT/CT-1 Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88677
2
02-Jul-02
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR3035CT
MBR3045CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Working peak reverse voltage
VRWM
35
45
V
Maximum DC blocking voltage
VDC
35
45
V
Maximum average forward rectified current
Total device
30
Per leg
IF(AV)
15
A
Peakrepetitive forward current per leg
IFRM
30
A
at TC = 105°C (rated VR, square wave, 20KHz)
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
200
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
2.0
A
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
–65 to +150
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500 (1)
to heatsink with t = 1 second, RH
≤ 30%
VISOL
3500 (2)
V
1500 (3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
IF = 20A,
TC = 125°C
0.60
forward voltage per leg at(4):IF = 30A,
TC = 25°CVF
0.76
V
IF = 30A,
TC = 125°C
0.72
Maximum instantaneous reverse current
TJ = 25°C
1.0
mA
per leg at rated DC blocking voltage(4)
TJ = 125°C
IR
60
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
ΘJC
1.5
4.5
1.5
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
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