參數(shù)資料
型號: MBR735
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Power Rectifier(7.5A,35V肖特基勢壘功率整流器)
中文描述: 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC, CASE 221B-04, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 52K
代理商: MBR735
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 3
1
Publication Order Number:
MBR735/D
MBR735, MBR745
SWITCHMODE
Power Rectifiers
The MBR735/45 series uses the Schottky Barrier principle with a
platinum barrier metal. These stateoftheart devices have the
following features:
Features
PbFree Packages are Available*
Guardring for Stress Protection
Low Forward Voltage
150
°
C Operating Junction Temperature
Epoxy Meets UL 94, V0 @ 0.125 in
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR735
MBR745
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 105
°
C)
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 105
°
C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
F(AV)
7.5
A
I
FRM
15
A
I
FSM
150
A
Peak Repetitive Reverse Surge Current
(2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
T
J
dv/dt
65 to +175
°
C
°
C
V/ s
Operating Junction Temperature
65 to +150
Voltage Rate of Change
(Rated V
R
)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
10,000
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
7.5 AMPERES
35 and 45 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
3
1, 4
http://onsemi.com
TO220AC
CASE 221B
PLASTIC
3
4
1
MARKING
DIAGRAM
AY WW
B7x5
A
Y
WW
B7x5
x
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
Device
Package
Shipping
ORDERING INFORMATION
MBR735
TO220
50 Units/Rail
MBR745
TO220
50 Units/Rail
MBR735G
TO220
(PbFree)
50 Units/Rail
MBR745G
TO220
(PbFree)
50 Units/Rail
相關PDF資料
PDF描述
MBR745 Schottky Barrier Power Rectifier(7.5A,45V肖特基勢壘功率整流器)
MBR840 Axial Lead Schottky Barrier Power Rectifier(8A軸向引腳肖特基勢壘功率整流器)
MBR835 Axial Lead Schottky Barrier Power Rectifier(8A軸向引腳肖特基勢壘功率整流器)
MBR845 Axial Lead Schottky Barrier Power Rectifier(8A軸向引腳肖特基勢壘功率整流器)
MBRB1545CT Schottky Barrier Power Rectifier(15A,45V肖特基勢壘功率整流器)
相關代理商/技術參數(shù)
參數(shù)描述
MBR735 C0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube
MBR735 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier
MBR735/45 功能描述:肖特基二極管與整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR735_07 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier
MBR735_1 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:7.5 AMPS. Schottky Barrier Rectifiers