參數(shù)資料
型號: MBR835
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Axial Lead Schottky Barrier Power Rectifier(8A軸向引腳肖特基勢壘功率整流器)
中文描述: 8 A, 35 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: PLASTIC, CASE 267-05, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 47K
代理商: MBR835
Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 1
1
Publication Order Number:
MBR835/D
MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low–voltage,
high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
High Current Capability
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard–Ring for Stress Protection
Low Forward Voltage
High Surge Capacity
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
°
C Max. for 10 Seconds, 1/16
from case
Shipped in plastic bags, 500 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
Polarity: Cathode indicated by Polarity Band
ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection:
Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR835
MBR840
MBR845
V
RRM
V
RWM
V
R
35
40
45
V
Average Rectified Forward Current
T
L
= 75
°
C (Psi
JL
= 12
°
C/W,
P.C. Board Mounting, see Note 2)
I
O
8.0
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
140
A
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
T
J
, T
stg
–65 to +125
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10
V/ns
Device
Package
Shipping
ORDERING INFORMATION
http://onsemi.com
AXIAL LEAD
CASE 267–05
(DO–201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
8.0 AMPERES
Preferred
devices are recommended choices for future use
and best overall value.
MBR835
Axial Lead
500 Units/Bag
MBR835RL
Axial Lead
1500/Tape & Reel
MARKING DIAGRAM
MBR8xx
MBR8xx = Device Code
xx
= 35, 40 or 45
MBR840
Axial Lead
500 Units/Bag
MBR840RL
Axial Lead
1500/Tape & Reel
MBR845
Axial Lead
500 Units/Bag
MBR845RL
Axial Lead
1500/Tape & Reel
相關(guān)PDF資料
PDF描述
MBR845 Axial Lead Schottky Barrier Power Rectifier(8A軸向引腳肖特基勢壘功率整流器)
MBRB1545CT Schottky Barrier Power Rectifier(15A,45V肖特基勢壘功率整流器)
MBRB2060CT Schottky Barrier Power Rectifier(20A,60V肖特基勢壘功率整流器(表貼封裝))
MBRB2515L Schottky Barrier Power Rectifier(25A,15V肖特基勢壘功率整流器(表貼封裝))
MBRB2535CTL SWITCHMODE Power Rectifier(開關(guān)模式功率整流器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR835RL 功能描述:DIODE SCHOTTKY 35V 8A DO201AD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
MBR840 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE 8A 40V TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):8A; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:150A; No. of Pins:2 ;RoHS Compliant: Yes
MBR840CT 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER
MBR840D 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
MBR840DC 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER