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參數(shù)資料
| 型號： | MBR40H100WD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | SWITCHMODE⑩ Power Rectifier 100 V, 40 A |
| 中文描述： | ⑩整流器的開關(guān)模式電源100伏，40甲 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 67K |
| 代理商： | MBR40H100WD |
MBR40H100WT
http://onsemi.com
5
MERCURY
SWITCH
V
D
I
D
DUT
10 mH COIL
+V
DD
I
L
S
1
BV
DUT
I
L
I
D
V
DD
t
0
t
1
t
2
t
Figure 9. Test Circuit
Figure 10. CurrentVoltage Waveforms
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
WAVAL
1
2LI2
LPK
BVDUT
BVDUT–VDD
WAVAL
1
2LI2
LPK
EQUATION (1):
EQUATION (2):
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相關(guān)代理商/技術(shù)參數(shù) |
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| MBR40H100WT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR40H100WT_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier100 V, 40 A |
| MBR40H100WT_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR40H100WT-F | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Performance Schottky Generation 5.0, 2 x 20 A |
| MBR40H100WTG | 功能描述:肖特基二極管與整流器 40A 100V H-SER SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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