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參數(shù)資料
| 型號： | MBR40H100WD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | SWITCHMODE⑩ Power Rectifier 100 V, 40 A |
| 中文描述： | ⑩整流器的開關模式電源100伏，40甲 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MBR40H100WD |
MBR40H100WT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 150
°
C
I
F(AV)
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 145
°
C
I
FRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
200
A
Operating Junction Temperature (Note 1)
T
J
+175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
W
AVAL
400
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.0
60
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 20 A, T
C
= 25
°
C)
(I
F
= 20 A, T
C
= 125
°
C)
(I
F
= 40 A, T
C
= 25
°
C)
(I
F
= 40 A, T
C
= 125
°
C)
v
F
0.80
0.67
0.90
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 125
°
C)
(Rated DC Voltage, T
C
= 25
°
C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
10
0.01
mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR40H100WT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR40H100WT_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier100 V, 40 A |
| MBR40H100WT_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR40H100WT-F | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Performance Schottky Generation 5.0, 2 x 20 A |
| MBR40H100WTG | 功能描述:肖特基二極管與整流器 40A 100V H-SER SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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