- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄48740 > MBR3060PT-E3/45 (VISHAY SEMICONDUCTORS) 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | MBR3060PT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | MBR3060PT-E3/45 |
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
T
J = 150 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
1
10
100
0.01
0.001
0.1
20
0
100
40
60
80
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 125 °C
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086(2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR3090FCT | 30 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3045FCT | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3060FCT | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR5025L | 50 A, 25 V, SILICON, RECTIFIER DIODE, TO-218 |
| MBR6030L | 60 A, 30 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3060RL | 功能描述:DIODE SCHOTTKY 60V 3A DO-201AD RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類(lèi)型:底座，接線(xiàn)柱安裝 封裝/外殼:DO-203AA，DO-4，接線(xiàn)柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱(chēng):*1N3879 |
| MBR3060ST | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR3060W | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBR3060WT | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 60 Volts |
| MBR3065/3P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Dual High-Voltage Schottky Rectifiers |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。