參數(shù)資料
型號(hào): MBR3060PT-E3/45
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD
封裝: ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 87K
代理商: MBR3060PT-E3/45
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 20 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
-
0.60
0.76
0.72
0.75
0.65
-
V
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 125 °C
IR
1.0
60
5.0
100
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Thermal resistance from junction to case per diode
RθJC
1.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR3045PT-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
0
6
12
24
30
0
50
100
150
18
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
150
100
250
200
300
1
100
10
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
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