參數(shù)資料
型號: MBR2060CT-E1
廠商: BCD SEMICONDUCTOR MANUFACTURING LTD
元件分類: 整流器
英文描述: 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
文件頁數(shù): 6/11頁
文件大?。?/td> 905K
代理商: MBR2060CT-E1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2060C
4
BCD Semiconductor Manufacturing Limited
May. 2010 Rev. 1. 1
Data Sheet
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC=136oC
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=131oC
IFRM
20
A
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
IFSM
150
A
Operating Junction Temperature (Note 2)
TJ
150
oC
Storage Temperature Range
TSTG
-50 to 150
oC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/
s
ESD (Machine Model=C)
>400
V
ESD (Human Body Model=3B)
>8000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Condition
Value
Unit
Maximum Thermal Resistance
θJC
Junction to Case
TO-220-3/
TO-220-3(2)
2.5
oC/W
TO-220F-3
4.5
θJA
Junction to Ambient
TO-220-3/
TO-220-3(2)
60
TO-220F-3
60
Thermal Characteristics
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