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參數(shù)資料
| 型號： | MBR150 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 95K |
| 代理商： | MBR150 |
3
Rectifier Device Data
Figure 5. Steady–State Thermal Resistance
Figure 6. Typical Capacitance
3/4
0
L, LEAD LENGTH (INCHES)
90
80
60
70
50
VR, REVERSE VOLTAGE (VOLTS)
50
80
0
60
50
40
30
20
R
40
30
20
3/8
1/8
1/4
1/2
5/8
7/8
1.0
60
70
10
20
30
40
70
80
10
100
200
C
J
°
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
100
90
TJ = 25
°
C
f = 1 MHz
NOTE 3 — MOUNTING DATA:
Data shown for thermal resistance junction–to–ambient
(R
θ
JA) for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the tie
point temperature cannot be measured.
Typical Values for
R
θ
JA in Still Air
Mounting
Method
Lead Length, L (in)
R
θ
JA
1/8
1/4
1/2
3/4
1
52
65
72
85
°
C/W
2
67
80
87
100
°
C/W
3
—
50
°
C/W
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PD
R
θ
S(A)
R
θ
L(A)
R
θ
J(A)
R
θ
J (K)
R
θ
L(K)
R
θ
S(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
θ
S = Thermal Resistance, Heat Sink to Ambient
R
θ
L = Thermal Resistance, Lead to Heat Sink
R
θ
J = Thermal Resistance, Junction to Case
PD = Power Dissipation
Mounting Method 1
P.C. Board with
1–1/2
″
x 1–1/2
″
copper surface.
Mounting Method 3
P.C. Board with
1–1/2
″
x 1–1/2
″
copper surface.
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
Mounting Method 2
ééééééé
L
L
éééééééé
éééééééé
é
é
é
é
é
L = 3/8
″
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
θ
L = 100
°
C/W/in typically and 120
°
C/W/in maximum.
R
θ
J = 36
°
C/W typically and 46
°
C/W maximum.
NOTE 5 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of ma-
jority carrier conduction, it is not subject to junction diode for-
ward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
diode in parallel with a variable capacitance. (See Figure 6.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2 MHz, e.g., the ratio of dc power to RMS power in
the load is 0.28 at this frequency, whereas perfect rectifica-
tion would yield 0.406 for sine wave inputs. However, in con-
trast to ordinary junction diodes, the loss in waveform effi-
ciency is not indicative of power loss: it is simply a result of
reverse current flow through the diode capacitance, which
lowers the dc output voltage.
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