參數(shù)資料
型號: MBR12035
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: 整流器
英文描述: 120 A, 35 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT PACKAGE-1
文件頁數(shù): 1/2頁
文件大?。?/td> 111K
代理商: MBR12035
39.62
19.69
Maximum
Sq.
Dia.
19.18
30.28
4.06
14.73
4.06
15.88
38.61
18.42
Minimum
Millimeter
3.96
13.34
3.86
18.92
30.02
15.37
Dia.
3.30
12.83
3.05
12.57
1.52
.725
.745
1.182
.156
.525
.152
.605
B
A
D
E
G
J
H
F
C
Dim. Inches
Minimum
.120
.495
K
L
1.56
.130
.160
.580
.160
1.192
.625
.505
1/4-20 UNC-2B
.755
.775
Maximum
Notes
B
D
J
G
C
F
K
L
E
A
H
Std. Polarity
Base is cathode
Rev. Polarity
Base is anode
ROHS Compliant
124NQ040
MBR12045
MBR12040
MBR12035
124NQ045
120NQ045
124NQ035
Industry
120NQ035
120NQ040
Part Number
v
Guard Ring Protection
Reverse Energy Tested
150°C Junction Temperature
Schottky Barrier Rectifier
120 Amperes/45 Volts
RRM 35 - 45 Volts
35V
40V
45V
Reverse Voltage
Repetitive Peak
Microsemi
Catalog Number
HS12035*
HS12040*
HS12045*
Working Peak
Reverse Voltage
35V
40V
45V
* Add Suffix R for Reverse Polarity
C = 100°C, Square wave,
0JC = .40°C/W
R
T
I
V
T
8.3ms, half sine,
J = 125°C
f = 1 KHZ, 25°C
RRM,
J = 125°C*
RRM,
J = 25°C
R = 5.0V,
C = 25°C
FM = 120A:
J = 25°C*
FM = 120A:
J = 125°C*
I
I F(AV)
2A
I
VFM
FM
V
I
C
I
R(OV)
RM
FSM
J
Maximum surge current
Max peak reverse current
Max peak forward voltage
Average forward current
Maximum repetitive reverse current
Typical junction capacitance
2 Amps
5500pF
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
120 Amps
2000 Amps
0.55 Volts
0.49 Volts
5mA
Thermal and Mechanical Characteristics
0.40°C/W
0.12°C/W
Case to sink
Junction to case
-55°C to 150°C
20-25 inch pounds
1.1 ounces (32 grams) typical
35-40 inch pounds
T
R
J
T
STG
OJC
OCS
Storage temp range
Max thermal resistance
Terminal Torque
Typical thermal resistance (greased)
Operating junction temp range
Weight
Mounting Base Torque
HS12035 - HS12045
120 Amp Schottky Rectifier
January, 2011 - Rev. 5
www.microsemi.com
相關PDF資料
PDF描述
MBR12045 120 A, 45 V, SILICON, RECTIFIER DIODE
MBR12040 120 A, 40 V, SILICON, RECTIFIER DIODE
MBR12040CT 60 A, 40 V, SILICON, RECTIFIER DIODE
MBR12045CT 60 A, 45 V, SILICON, RECTIFIER DIODE
MBR120HW-T3 1 A, 20 V, SILICON, SIGNAL DIODE
相關代理商/技術參數(shù)
參數(shù)描述
MBR12035 CTR 制造商:GENESIC SEMICONDUCTOR 功能描述:DIODE MODULE 35V 120A D-67
MBR12035CT 功能描述:肖特基二極管與整流器 35V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR12035CTR 功能描述:肖特基二極管與整流器 35V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR12035R 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A
MBR12040 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:120 Amp Rectifier 20 to 100 Volts Schottky Barrier