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參數(shù)資料
| 型號： | MBR120HW-T3 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 193K |
| 代理商： | MBR120HW-T3 |
MBR120HW/ MBR140HW
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
Low Turn-on Voltage
!
Fast Switching
A
!
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
D
Classification 94V-O
B
E
Mechanical Data
H
!
Case: SOD-123, Molded Plastic
G
!
Terminals: Plated Leads Solderable per
J
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.01 grams (approx.)
!
Marking:
MBR120HW G3
MBR140HW G5
Maximum Ratings @T
A=25°C unless otherwise specified
Characteristic
Symbol
MBR120HW
MBR140HW
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
40
V
Forward Continuous Current (Note 1)
IF
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
25
A
Power Dissipation (Note 1)
Pd
450
mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
RJA
222
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
°C
Electrical Characteristics @T
A=25°C unless otherwise specified
Characteristic
Symbol
MBR120HW
MBR140HW
Unit
Forward Voltage Drop
@IF = 1.0A
VFM
0.45
0.55
V
Peak Reverse Leakage Current @ DC Blocking Voltage
IRM
400
500
A
Typical Junction Capacitance (VR = 4V DC, f = 1MHz)
Cj
50
pF
Note: 1. Valid provided that terminals are kept at ambient temperature.
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Data Sheet 3282, Rev. —
SOD-123
Dim
Min
Max
Min
Max
A
3.6
3.9 0.14 0.154
B
2.5
2.8 0.098 0.110
C
1.4
1.8 0.055 0.070
D
0.5
0.7 0.020 0.028
E
—
0.2
— 0.008
G
0.4
— 0.016 —
H
0.95 1.35 0.037 0.053
J
—
0.12
— 0.005
In mm
In inch
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| MBR120LSFT1 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBR120LSFT1G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT3 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT3G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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