參數(shù)資料
型號： MBR10H100HE3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 1/5頁
文件大小： 128K
代理商： MBR10H100HE3/45
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
Document Number: 88667
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
250 A
VF
0.64 V
IR
4.5 A
TJ max.
175 °C
PIN 2
PIN 1
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1
K
PIN 2
HEATSINK
1
2
1
2
K
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90
MBR10H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
VAC
1500
V
相關PDF資料
PDF描述
MBR10H90HE3/45 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRB10H90HE3/81 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
MURS160HE3/52T 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
MURS340HE3/9AT 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
MURS360HE3/57T 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB
相關代理商/技術參數(shù)
參數(shù)描述
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