- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄240916 > MURS160HE3/52T (VISHAY SEMICONDUCTORS) 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA PDF資料下載
參數(shù)資料
| 型號(hào)： | MURS160HE3/52T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 87K |
| 代理商： | MURS160HE3/52T |
MURS140 & MURS160
Vishay General Semiconductor
Document Number: 88688
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
high
frequency
rectification
and
freewheeling application in switching mode converters
and
inverters
for
consumer,
computer
and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
400 V, 600 V
IFSM
35 A
trr
50 ns
VF
1.05 V
TJ max.
175 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MURS160
UNIT
Device marking code
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at (Fig. 1)
TL = 150 °C
TL = 125 °C
IF(AV)
1.0
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURS340HE3/9AT | 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MURS360HE3/57T | 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MBR20100CT-E3/4W | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20100CT-E3/4W | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H90CTHE3/45 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS160-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
| MURS160-M3/52T | 制造商:Vishay Semiconductors 功能描述:1A,600V,50NS,UF RECT,SMD |
| MURS160-M3/5BT | 制造商:Vishay Semiconductors 功能描述:1A,600V,50NS,UF RECT,SMD |
| MURS160T3 | 功能描述:整流器 600V 1A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160T3 | 制造商:ON Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。