參數(shù)資料
型號(hào): MBR0540T1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Barrier Power Rectifier(0.5A,40V表貼型肖特基勢(shì)壘功率整流器)
中文描述: 0.5 A, 40 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 425-04, 2 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 68K
代理商: MBR0540T1
MBR0540T1, MBR0540T3
http://onsemi.com
4
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
20
60
0
T
L
, LEAD TEMPERATURE (
°
C)
0.8
0.4
0.3
0.2
0.1
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.1
0
0.45
0.40
0.35
0.15
0.05
0
0.4
40
,
IO
80
120
100
0.5
0.2
0.3
0.5
0.8
0.10
PF
140
0.6
SQUARE WAVE
dc
I
pk
/I
o
=
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
=
SQUARE WAVE
dc
0.7
0.30
0.20
0.25
0.6
0.7
FREQ = 20 kHz
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
30
0
V
R
, REVERSE VOLTAGE (VOLTS)
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
25
40
0
118
114
112
110
C
T
J
15
5.0
10
20
25
35
40
30
35
5.0
10
20
15
116
120
126
,
°
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as
T
J
= T
Jmax
r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 118
°
C/W
180
°
C/W
149
°
C/W
206
°
C/W
228
°
C/W
T
J
= 25
°
C
122
124
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