參數(shù)資料
型號(hào): MBR0540T1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Barrier Power Rectifier(0.5A,40V表貼型肖特基勢(shì)壘功率整流器)
中文描述: 0.5 A, 40 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 425-04, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 68K
代理商: MBR0540T1
MBR0540T1, MBR0540T3
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 115
°
C)
I
O
0.5
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 115
°
C)
I
FRM
1.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave,
Single Phase, 60 Hz)
I
FSM
5.5
A
Storage/Operating Case Temperature Range
T
stg
, T
C
55 to +150
°
C
Operating Junction Temperature
T
J
55 to +150
°
C
Voltage Rate of Change
(Rated V
R
, T
J
= 25
°
C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
dv/dt
1000
V/ s
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance JunctiontoLead (Note 1)
Thermal Resistance JunctiontoAmbient (Note 2)
R
tjl
R
tja
118
206
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
v
F
T
J
= 25
°
C
T
J
= 100
°
C
V
(i
F
= 0.5 A)
(i
F
= 1 A)
0.51
0.62
0.46
0.61
Maximum Instantaneous Reverse Current (Note 3)
I
R
T
J
= 25
°
C
T
J
= 100
°
C
A
(V
R
= 40 V)
(V
R
= 20 V)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width
250 s, Duty Cycle
2.0%.
20
10
13,000
5,000
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