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參數資料
| 型號： | MBM29DL162BD-70PFTN |
| 廠商： | FUJITSU LTD |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數： | 21/74頁 |
| 文件大小： | 1170K |
| 代理商： | MBM29DL162BD-70PFTN |
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MBM29DL16XTD/BD-70/90
28
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Group Protection
The MBM29DL16XTD/BD feature hardware sector group protection. This feature will disable both program and
erase operations in any combination of seventeen sector groups of memory. (See “Sector Group Addresses
(MBM29DL16XTD/BD) Tables” in sFLEXIBLE SECTOR-ERASE ARCHITECTURE). The sector group
protection feature is enabled using programming equipment at the user’s site. The device is shipped with all
sector groups unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest
VID = 11.5 V), CE = VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A19, A18, A17, A16, A15, A14, A13,
and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29DL161TD/BD,
MBM29DL162TD/BD, MBM29DL163TD/BD, MBM29DL164TD/BD)” in sFLEXIBLE SECTOR-ERASE
ARCHITECTURE define the sector address for each of the thirty nine (39) individual sectors, and “Sector Group
Addresses (MBM29DL16XTD/BD) Tables” in sFLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector
group address for each of the seventeen (17) individual group sectors. Programming of the protection circuitry
begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group
addresses must be held constant during the WE pulse. See “(15) AC Waveforms for Sector Group Protection”
in sTIMING DIAGRAM and “(5) Sector Group Protection Algorithm” in sFLOW CHART for sector group
protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and
A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector.
Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses, except
for A0, A1, and A6 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer
and device codes. A-1 requires to apply to VIL on byte mode.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses (A19, A18, A17, A16,
A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected sector
group. See “MBM29DL161TD/BD, MBM29DL162TD/BD, MBM29DL163TD/BD and MBM29DL164TD/BD
Sector Group Protection Verify Autoselect Codes Tables” and these “Extended Autoselect Code Tables” in
sDEVICE BUS OPERATION for Autoselect codes.
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29DL16XTD/BD
devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to
high voltage (VID). During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to “(16) Temporary Sector Group Unprotection Timing Diagram” in sTIMING
DIAGRAM and “(6) Temporary Sector Group Unprotection Algorithm” in sFLOW CHART.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBM29DL162BD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
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