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參數(shù)資料
| 型號： | MBD110DWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes(雙肖特基勢壘二極管) |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封裝： | CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 64K |
| 代理商： | MBD110DWT1 |
MBD110DWT1, MBD330DWT1, MBD770DWT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
(BR)R
7.0
30
70
10
V
Diode Capacitance
(V
R
= 0, f = 1.0 MHz, Note 1)
MBD110DWT1
C
T
0.88
1.0
pF
Total Capacitance
(V
R
= 15 Volts, f = 1.0 MHz)
(V
R
= 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
C
T
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
MBD110DWT1
MBD330DWT1
MBD770DWT1
I
R
0.02
13
9.0
0.25
200
200
A
nAdc
nAdc
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
NF
6.0
dB
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
F
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
Vdc
ORDERING INFORMATION
Device
Marking
Package
Shipping
MBD110DWT1
M4
SC88 / SOT363
3000 Units / Tape & Reel
MBD110DWT1G
SC88 / SOT363
(PbFree)
MBD330DWT1
T4
SC88 / SOT363
MBD330DWT1G
SC88 / SOT363
(PbFree)
MBD770DWT1
H5
SC88 / SOT363
MBD770DWT1G
SC88 / SOT363
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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PDF描述 |
|---|---|
| MBD330DWT1 | Dual Schottky Barrier Diodes(雙肖特基勢壘二極管) |
| MBD701 | Silicon Hot-Carrier Diodes(硅熱載二極管) |
| MBR0520LT1 | Surface Mount Schottky Barrier Power Rectifier(0.5A,20V表貼型肖特基勢壘功率整流器) |
| MBR0520LT3 | Surface Mount Schottky Barrier Power Rectifier(0.5A,20V表貼型肖特基勢壘功率整流器) |
| MBR0530T1 | Surface Mount Schottky Barrier Power Rectifier(0.5A,30V表貼型肖特基勢壘功率整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD110DWT1_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G | 功能描述:肖特基二極管與整流器 7V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:* |
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