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參數(shù)資料
| 型號： | MBC13900T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC, CASE 318M, SC-70, 4 PIN |
| 文件頁數(shù)： | 2/26頁 |
| 文件大?。?/td> | 813K |
| 代理商： | MBC13900T1 |
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2
MBC13900 Technical Data
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
Electrical Specifications
1 Electrical Specifications
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
6.5
Vdc
Collector-Base Voltage
V
CBO
8.0
Vdc
Emitter-Base Voltage
V
EBO
3.0
Vdc
Power Dissipation @ T
C
= 75C
Derate Linearity above T
C
= 75C at
P
D(max)
0.188
2.5
W
mW/C
Collector Current-Continuous
I
C
20
mA
Maximum Junction Temperature
T
J(max)
150
C
Storage Temperature
T
stg
-55 to 150
C
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics
or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤
400 V and
Machine Model (MM)
≤
50 V. Additional ESD data available upon request.
Table 2. Thermal Characteristic
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
θ
JC
400
C/W
NOTES:
To calculate the junction termpature use T
J
= (P
D
x R
θ
JC
) + T
C
. The case temperature measured on collector lead adjacent to the
package body.
Table 3. Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
OFF Characteristic
[Note 1]
Collector-Emitter Breakdown Voltage
(I
C
= 0.1 mA, I
B
= 0)
V
(BR)CEO
6.5
7.5
-
Vdc
Collector-Base Breakdown Voltage (I
C
= 0.1 mA, I
E
= 0)
V
(BR)CBO
8.0
12
-
Vdc
Emitter-Base Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0)
V
(BR)EBO
3.0
4.0
-
Vdc
Collector Cutoff Current (V
CB
= 7.0 V, I
E
= 0)
I
CBO
-
-
0.1
∝
A
Emitter Cutoff Current (V
EB
= 2.0 V, I
C
= 0)
I
EBO
-
-
0.1
∝
A
Base Cutoff Current (V
CE
= 5.0 V, I
B
= 0)
I
CEO
-
-
0.1
∝
A
ON Characteristic
[Note 1]
DC Current Gain (V
CE
= 2.0 V, I
C
= 5.0 mA)
h
FE
100
-
200
-
F
Freescale Semiconductor, Inc.
n
.
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