參數(shù)資料
型號: MBC13900T1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: NPN Silicon Low Noise Transistor
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ULTRA SMALL, PLASTIC, CASE 318M, SC-70, 4 PIN
文件頁數(shù): 10/26頁
文件大?。?/td> 813K
代理商: MBC13900T1
10
MBC13900 Technical Data
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
Applications Information
3 Applications Information
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information are available from Motorola under part number KITMBC13900/D.
3.1 900 MHz LNA
Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The
design goals for the circuit are:
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Typical performance that can be expected from this circuit at 3.0 and 3.5 V V
CC
is listed in Table 4. The
component values can be changed to enhance the performance of a particular parameter but usually at the
expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be
sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias
current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the
device.
Figure 18. 900 MHz LNA Schematic
C3
L1
R4
R3
C2
C4
V
CC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C
7
F
Freescale Semiconductor, Inc.
n
.
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