- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369891 > MBC13720T1 (MOTOROLA INC) Amplifier with Bypass Switch PDF資料下載
參數(shù)資料
| 型號： | MBC13720T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | Amplifier with Bypass Switch |
| 中文描述： | 400 MHz - 2400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 419B-01, SOT-363, 6 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 704K |
| 代理商： | MBC13720T1 |
10
MBC13720 Technical Data
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
Application Information
In Figure 3, the typical application circuit at 900 MHz is shown. The input low frequency trap again is used
to maximize the input intercept point. It has moderate IP3 performance and high gain. For higher IP3,
Figure 4 shows the application circuit with feedback network. Capacitive feedback method is used to
reduce the gain and therefore increase the 3rd order input intercept point. The feedback circuit is designed
to provide unconditional stability.
The corresponding PCBs are shown in Figures 5 through 10. Typical characteristics of the application
boards are shown in Table 10.
Figure 2. Typical 1.9 and 2.4 GHz LNA
Application Schematic
Figure 3. Typical 900 MHz LNA
Application Schematic
RF In
C3
1.0 pF
RF
Out
4
5
6
3
1
2
EN2
C4
4.7 μF
EN1
T2
T3
T1
R1
330
C6 27 pF
T1, T2, T3 = 50
Microstrip Line @ 150 mils
C1 27 pF
C2
4.7 μF
L2
2.7 nH
L1
8.2 nH
Bias
Control
RF In
4
5
6
3
1
2
EN2
C4
47 pF
EN1
T1
T2
R1 330
C3 3.0 pF
C5
4.7 μF
C1 47 pF
C2
4.7 μF
L1 8.2 nH
L3
8.2 nH
L2
47 nH
RF
Out
Bias
Control
F
Freescale Semiconductor, Inc.
n
.
相關PDF資料 |
PDF描述 |
|---|---|
| MBD301 | 30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD301 | SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
| MBD301LT1 | 30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD301 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| MBD701 | 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBC13900 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:兩極晶體管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。