參數(shù)資料
型號(hào): MB96F386RSBPMC-GSE2
廠商: Fujitsu Semiconductor America Inc
文件頁(yè)數(shù): 78/132頁(yè)
文件大?。?/td> 0K
描述: IC MCU 288KB FLASH/ROM 120LQFP
標(biāo)準(zhǔn)包裝: 1
系列: F²MC MB96380
核心處理器: F²MC-16FX
芯體尺寸: 16-位
速度: 56MHz
連通性: CAN,EBI/EMI,I²C,LIN,SCI,UART/USART
外圍設(shè)備: DMA,LCD,LVD,LVR,POR,PWM,WDT
輸入/輸出數(shù): 96
程序存儲(chǔ)器容量: 288KB(288K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 120-LQFP
包裝: 托盤(pán)
其它名稱: 865-1088
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MB96380 Series
FME-MB96380 rev 10
5
External Interrupts
Edge sensitive or level sensitive
Interrupt mask and pending bit per channel
Each available CAN channel RX has an external interrupt for wake-up
Selected USART channels SIN have an external interrupt for wake-up
Non Maskable Interrupt
Disabled after reset
Once enabled, can not be disabled other than by reset.
Level high or level low sensitive
Pin shared with external interrupt 0.
External bus interface
8-bit or 16-bit bidirectional data
Up to 24-bit addresses
6 chip select signals
Multiplexed address/data lines
Non-multiplexed address/data lines
Wait state request
External bus master possible
Timing programmable
Alarm comparator
Monitors an external voltage and generates an interrupt in case of a voltage lower or
higher than the defined thresholds
Threshold voltages defined externally or generated internally
Status is readable, interrupts can be masked separately
I/O Ports
Virtually all external pins can be used as general purpose I/O
All push-pull outputs (except when used as I2C SDA/SCL line)
Bit-wise programmable as input/output or peripheral signal
Bit-wise programmable input enable
Bit-wise programmable input levels: Automotive / CMOS-Schmitt trigger / TTL
Bit-wise programmable pull-up resistor
Bit-wise programmable output driving strength for EMI optimization
Package
120-pin plastic LQFP
Flash Memory
Supports automatic programming, Embedded Algorithm
Write/Erase/Erase-Suspend/Resume commands
A flag indicating completion of the algorithm
Number of erase cycles: 10,000 times
Data retention time: 20 years
Erase can be performed on each sector individually
Sector protection
Flash Security feature to protect the content of the Flash
Low voltage detection during Flash erase
Feature
Description
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